IXF(K,X)64N60P دیتاشیت

IXF(K,X)64N60P

مشخصات دیتاشیت

نام دیتاشیت IXF(K,X)64N60P
حجم فایل 216.53 کیلوبایت
نوع فایل pdf
تعداد صفحات 6

مشاهده دیتاشیت IXF(K,X)64N60P

دانلود دیتاشیت

سایر مستندات

IXFK64N60P 2 pages

IXFK64N60P 6 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Littelfuse/IXYS IXFK64N60P
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 1.04kW
  • Total Gate Charge (Qg@Vgs): 200nC@10V
  • Drain Source Voltage (Vdss): 600V
  • Input Capacitance (Ciss@Vds): 12000pF@25V
  • Continuous Drain Current (Id): 64A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@8mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 96mΩ@10V,32A
  • Package: TO-264-3
  • Manufacturer: IXYS
  • Series: HiPerFET™, PolarHT™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 96mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 1040W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264AA (IXFK)
  • Package / Case: TO-264-3, TO-264AA
  • detail: N-Channel 600V 64A (Tc) 1040W (Tc) Through Hole TO-264AA (IXFK)

محصولات مشابه